Active terahertz metamaterial devices
US7826504B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 3, 2009 |
| Grant date | Nov 2, 2010 |
| Priority date | — |
| Expiry date | Apr 24, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01Q15/0086
- WIPO fieldTelecommunications
- WIPO sectorElectrical engineering
Abstract
Metamaterial structures are taught which provide for the modulation of terahertz frequency signals. Each element within an array of metamaterial (MM) elements comprises multiple loops and at least one gap. The MM elements may comprise resonators with conductive loops and insulated gaps, or the inverse in which insulated loops are present with conductive gaps; each providing useful transmissive control properties. The metamaterial elements are fabricated on a semiconducting substrate configured with a means of enhancing or depleting electrons from near the gaps of the MM elements. An on to off transmissivity ratio of about 0.5 is achieved with this approach. Embodiments are described in which the MM elements incorporated within a Quantum Cascade Laser (QCL) to provide surface emitting (SE) properties.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.