Vertical cavity surface emitting laser having multiple top-side contacts
US7826506B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 12, 2005 |
| Grant date | Nov 2, 2010 |
| Priority date | — |
| Expiry date | Aug 31, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/18358
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A VCSEL with undoped mirrors. An essentially undoped bottom DBR mirror is formed on a substrate. A periodically doped first conduction layer region is formed on the bottom DBR mirror. The first conduction layer region is heavily doped at a location where the optical electric field is at about a minimum. An active layer, including quantum wells, is on the first conduction layer region. A periodically doped second conduction layer region is connected to the active layer. The second conduction layer region is heavily doped where the optical electric field is at a minimum. An aperture is formed in the epitaxial structure above the quantum wells. A top mirror coupled to the periodically doped second conduction layer region. The top mirror is essentially undoped and formed in a mesa structure. An oxide is formed around the mesa structure to protect the top mirror during wet oxidation processes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.