Bimorphic structures, sensor structures formed therewith, and methods therefor
US7827660B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 30, 2008 |
| Grant date | Nov 9, 2010 |
| Priority date | — |
| Expiry date | Jul 30, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49105
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A bimorphic structure responsive to changes in an environmental condition, sensor structures incorporating one or more of such bimorphic structures, and a method of forming such bimorphic structures. The sensor structure has an electrically-conductive first contact on a substrate, and a bimorph beam anchored to the substrate so that a portion thereof is suspended above the first contact. The bimorph beam has a multilayer structure that includes first and second layers, with the second layer between the first layer and the substrate. A portion of the first layer projects through an opening in the second layer toward the first contact so as to define an electrically-conductive second contact located on the beam so as to be spaced apart and aligned with the first contact for contact with the first contact when the beam sufficiently deflects toward the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.