Patent · US Active

Gas sensor and method of making

US7827852B2 · kind B2 · utility

6Cited by
13References
25Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 20, 2007
Grant dateNov 9, 2010
Priority date
Expiry dateJan 14, 2029

Classification

  • Technology area (CPC F)Mechanical Engineering; Lighting; Heating
  • CPC primaryF02D41/1476
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

A gas sensor is disclosed. The gas sensor includes a gas sensing layer including doped oxygen deficient tungsten oxide and a dopant selected from the group consisting of Re, Ni, Cr, V, W, and a combination thereof, at least one electrode positioned within a layer of titanium, and a response modification layer. The at least one electrode is in communication with the gas sensing layer and the gas sensing layer is capable of detecting at least one gas selected from the group consisting of NO, NO2, SOx O2, H2O, and NH3. A method of fabricating the gas sensor is also disclosed.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.