Gas sensor and method of making
US7827852B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 20, 2007 |
| Grant date | Nov 9, 2010 |
| Priority date | — |
| Expiry date | Jan 14, 2029 |
Classification
- Technology area (CPC F)Mechanical Engineering; Lighting; Heating
- CPC primaryF02D41/1476
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A gas sensor is disclosed. The gas sensor includes a gas sensing layer including doped oxygen deficient tungsten oxide and a dopant selected from the group consisting of Re, Ni, Cr, V, W, and a combination thereof, at least one electrode positioned within a layer of titanium, and a response modification layer. The at least one electrode is in communication with the gas sensing layer and the gas sensing layer is capable of detecting at least one gas selected from the group consisting of NO, NO2, SOx O2, H2O, and NH3. A method of fabricating the gas sensor is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.