Field-effect transistor, sensor using it, and production method thereof
US7829362B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 27, 2007 |
| Grant date | Nov 9, 2010 |
| Priority date | — |
| Expiry date | Nov 27, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T436/114165
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A sensor which has high measuring sensitivity and is excellent in response is provided by forming a porous film in a sensitive section of a field-effect transistor. It comprises a porous body, which is formed on a sensitive section (here, a gate insulating film) of the field-effect transistor and has cylindrical pores which are formed almost perpendicularly to a substrate, and the field-effect transistor. It uses as a porous film a porous film which is made of a semiconductor material whose main component (except oxygen) is silicon, germanium, or a composite of silicon and germanium, or a porous film made of an insulation material whose main component is silicon oxide, which has pores perpendicular to the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.