Patent · US Active

Diamond medical devices

US7829377B2 · kind B2 · utility

2Cited by
4References
16Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 11, 2006
Grant dateNov 9, 2010
Priority date
Expiry dateJun 8, 2028

Classification

  • Technology area (CPC B)Performing Operations; Transporting
  • CPC primaryB81C1/00634
  • WIPO fieldMicro-structural and nano-technology
  • WIPO sectorChemistry

Abstract

Masked and controlled ion implants, coupled with annealing or etching are used in CVD formed single crystal diamond to create structures for both optical applications, nanoelectromechanical device formation, and medical device formation. Ion implantation is employed to deliver one or more atomic species into and beneath the diamond growth surface in order to form an implanted layer with a peak concentration of atoms at a predetermined depth beneath the diamond growth surface. The composition is heated in a non-oxidizing environment under suitable conditions to cause separation of the diamond proximate the implanted layer. Further ion implants may be used in released structures to straighten or curve them as desired. Boron doping may also be utilized to create conductive diamond structures.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.