Display device and manufacturing method of the same
US7829395B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jan 22, 2008 |
| Grant date | Nov 9, 2010 |
| Priority date | — |
| Expiry date | Mar 28, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
Abstract
The present invention provides a method for manufacturing a display device which can reliably form electrodes in a thin film transistor. A method for manufacturing a display device includes the steps of: preparing a substrate having a sequentially stacked body formed of a gate signal line, an insulation film, a semiconductor layer and a conductor layer; forming a drain electrode and a source electrode of a thin film transistor at least in a region where the thin film transistor is formed in a pattern in which one of the drain electrode and the source electrode is formed in an approximately U shape having an open-ended one end side and a connecting portion on another end side such that one electrode surrounds a distal end portion of another electrode as viewed in a plan view and a projecting portion is formed on a side of the connecting portion opposite to another electrode, wherein the respective electrodes are formed by selectively etching the conductor layer using a photoresist film as a mask; and etching the semiconductor layer using a deformed photoresist film which is formed by directly reflowing the photoresist film as a mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.