Method for making thin film transistor
US7829398B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 11, 2007 |
| Grant date | Nov 9, 2010 |
| Priority date | — |
| Expiry date | Feb 11, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K71/621
Abstract
A method for making a thin film transistor (TFT) is provided. A mask is first formed on the backside of a substrate, and is used to fabricate a gate, source, and drain of the transistor by backside exposure, such that the source and drain can be self-aligned with the gate pattern. In this way, an alignment shift due to expansion or contraction after performing a high temperature process on an insulating layer can be avoided. Further, since the backside mask previously formed on the substrate can be shifted with the expansion or contraction of the substrate, the process is simplified. Moreover, the source/drain can be accurately aligned with the gate, so that parasitic capacitance can be reduced and flickering of the panel can be avoided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.