Silicon carbide semiconductor device and method for producing the same
US7829416B2 · kind B2 · utility
617Cited by
1References
7Claims
0Family size
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Key dates
| Filing date | Aug 1, 2008 |
| Grant date | Nov 9, 2010 |
| Priority date | — |
| Expiry date | Oct 30, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/931
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A gate electrode 18 formed on a silicon carbide substrate 11 includes a silicon lower layer 18A and a silicide upper layer 18B provided on the silicon lower layer 18A, the silicide upper layer 18B being made of a compound of a first metal and silicon. A source electrode 1as formed on the surface of the silicon carbide substrate 11 and in contact with an n type source region and a p+ region contains second metal silicide different from the first metal silicide. Side faces of the silicon lower layer 18A are covered with an insulator.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.