Methods for preparing and devices with treated dummy moats
US7829430B2 · kind B2 · utility
2Cited by
3References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 31, 2007 |
| Grant date | Nov 9, 2010 |
| Priority date | — |
| Expiry date | Dec 30, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/10
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Devices and methods are presented to fabricate dummy moats in an isolation region on a substrate. Presently, dummy moats are prone to losing impedance after the silicidation process. In high-voltage devices, silicided dummy moats reduce the breakdown voltage between active regions, particularly when the dummy moat overlaps or is in close proximity to a junction. The present devices and methods disclose a dummy moat covered with an oxide layer. During the silicidation process, the dummy moat and other designated isolation regions remain non-silicided. Thus, high and stable breakdown voltages are maintained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.