Field effect transistor manufacturing method
US7829444B2 · kind B2 · utility
135Cited by
6References
3Claims
0Family size
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Key dates
| Filing date | Nov 9, 2005 |
| Grant date | Nov 9, 2010 |
| Priority date | — |
| Expiry date | Dec 3, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
Abstract
Provided is a novel method for manufacturing a field effect transistor. Prior to forming an amorphous oxide layer on a substrate, ultraviolet rays are irradiated onto the substrate surface in an ozone atmosphere, plasma is irradiated onto the substrate surface, or the substrate surface is cleaned by a chemical solution containing hydrogen peroxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.