Patent · US Active

Through-wafer vias

US7829462B2 · kind B2 · utility

4Cited by

25References

3Claims

0Family size

Assignee

Teledyne Licensing, LLC · US

Inventors

Jeffrey F. DeNatale · Thousand Oaks, US
Stefan C. Lauxtermann · Porta Westfalica, DE

Key dates

Filing date	May 3, 2007
Grant date	Nov 9, 2010
Priority date	—
Expiry date	Dec 16, 2027

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A through-wafer via interconnect region is in a circuit portion of a wafer, the circuit portion including at least one electrically conducting metal layer and configured for use, after dicing of the wafer, as one of a plurality of layers stacked vertically to form a three dimensional integrated circuit. Within the metal layer in the circuit portion, the metal is removeably distributed such that the ratio of metal to nonmetal area, within the via region, varies by less than a predetermined amount from the ratio of metal to nonmetal area outside the via region.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.