Electron beam irradiation device
US7829863B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 18, 2005 |
| Grant date | Nov 9, 2010 |
| Priority date | — |
| Expiry date | Sep 20, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31794
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An electron beam irradiation device of the present invention includes: a projector 8 for generating a two-dimensional light pattern 13; a microchannel plate 11 for (i) generating an electron beam array based on the light pattern 13 having entered, (ii) amplifying the electron beam array, and (iii) emitting the electron beam array as an amplified electron beam array 14; and an electron beam lens section 12 for converging the amplified electron beam array 14. This electron beam irradiation device is capable of manufacturing a semiconductor device whose performance is improved through a finer processing by means of irradiation using an electron beam. Further, the electron beam irradiation device allows cost reduction, because the device allows collective irradiation using a two dimensional pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.