Thin film transistor, manufacturing method thereof, and TFT LCD using the same
US7829896B2 · kind B2 · utility
5Cited by
6References
13Claims
0Family size
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Key dates
| Filing date | Nov 5, 2007 |
| Grant date | Nov 9, 2010 |
| Priority date | — |
| Expiry date | Jun 4, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A thin film transistor (TFT) that comprises a gate electrode on a substrate, a gate insulation layer on the gate electrode, an active layer having a source region, a drain region, and a channel region on the gate insulation layer, and a source electrode and a drain electrode formed over the source region and drain region of the active layer respectively and facing each other with respect to the channel region. The profile of channel region between the source electrode and drain electrode is changed in a bend line. A method for forming the TFT is also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.