Photo detector and a display panel having the same

US7829920B2 · kind B2 · utility

Assignee

• Au Optronics Corporation · TW

Inventors

• An-Thung Cho · Wanrong, TW
• Chia-Tien Peng · Hsinchu, TW
• Kun-Chih Lin · Hsinchu, TW
• Wen-Jen Chiang · Zhubei City, TW
• Chih-Yang Chen · Hsinchu, TW
• Chrong-Jung Lin · Taipei, TW
• Ya-Chin King · Hsinchu, TW
• Chih-Wei Chao · Baoshan, TW
• Chien-Sen Weng · Baoshan, TW
• Feng-Yuan Gan · Baoshan, TW

Key dates

• Filing date: Jul 18, 2008
• Grant date: Nov 9, 2010
• Expiry date: May 8, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F55/155

Abstract

A photo detector has a sensing TFT (thin film transistor) and a photodiode. The sensing TFT has a gate and a base. The photodiode has an intrinsic semiconductor region electrically connected to the gate and the base of the sensing TFT. The sensing TFT and the photodiode both have a structure comprising low temperature poly-silicon. A display panel contains the photo detector is also disclosed.