MOS transistor capable of withstanding significant currents

US7829958B2 · kind B2 · utility

Assignee

• STMicroelectronics SA

Inventors

• Sandrine Majcherczak · Chambéry, FR
• Carlo Tinella · Pavia, IT
• Olivier Richard · Choisy-le-Roi, FR
• Andreia Cathelin · Laval, FR

Key dates

• Filing date: Dec 26, 2007
• Grant date: Nov 9, 2010
• Expiry date: Dec 26, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A MOS transistor capable of withstanding significant currents, having doped areas corresponding to first and second main terminals of elementary MOS transistors and having, in top view, the shape of parallel strips separated by gate regions; first conductive elements which do not extend on the doped areas corresponding to the second main terminals and dividing into first fingers extending at least partly on the doped areas corresponding to the first main terminals and connected thereto; and second conductive elements which do not extend on the doped areas corresponding to the first main terminals and divide into second fingers extending at least partly on the doped areas corresponding to the second main terminals and connected thereto, the second fingers being at least partly intercalated with the first fingers.