Laser diode
US7830938B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 15, 2008 |
| Grant date | Nov 9, 2010 |
| Priority date | — |
| Expiry date | Jan 19, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/18
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention provides a laser diode having both a small vertical far-field beam divergence and a large vertical optical confinement factor, as well as a method of fabricating the laser diode. The laser diode comprises a layer stack of semiconductor material, which includes a mode-splitting layer having a low refractive index inserted between waveguide layers. In addition to increasing the vertical near-field beam width of the laser diode, the mode-splitting layer also produces a shoulder in an optical mode generated in an active layer of the layer stack, increasing vertical overlap of the optical mode with the active layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.