Nitride semiconductor laser element having nitride semiconductor substrate and nitride semiconductor layer laminated thereon with nitride semiconductor substrate and nitride semiconductor layer having recesses formed in high dislocation density region of nitride semiconductor substrate and nitride semiconductor layer having portions with different film thicknesses
US7830940B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 4, 2007 |
| Grant date | Nov 9, 2010 |
| Priority date | — |
| Expiry date | Mar 6, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2304/12
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A nitride semiconductor laser element comprises a nitride semiconductor substrate and a nitride semiconductor layer laminated thereon, wherein the nitride semiconductor substrate has a high dislocation density region and a low dislocation density region containing lower dislocation than that of the high dislocation density region, and has at least one recess formed in at least the high dislocation density region, the nitride semiconductor layer has a first nitride semiconductor layer in which the grown film thickness in the lateral direction from the side faces of the recess in the substrate is greater than the grown film thickness in the heightwise direction from a region other than the recess, and a second nitride semiconductor layer that is disposed on the first nitride semiconductor layer and contains indium, and the first nitride semiconductor layer and second nitride semiconductor layer have recess over the recess in the nitride semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.