Method for fabricating microstructure and microstructure
US7833430B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 25, 2005 |
| Grant date | Nov 16, 2010 |
| Priority date | — |
| Expiry date | Mar 20, 2029 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2201/0133
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method of making a microstructure with thin wall portions (T1-T3) includes a step of performing a first etching process to a material substrate having a laminate structure including a first conductive layer (11) and a second conductive layer (12) having a thickness of the thin wall portions (T1-T3), where the etching is performed from the side of the first conductive layer (11) thereby forming in the second conductive layer (12) pre thin wall portions (T1′-T3′) which has a pair of side surfaces apart from each other in an in-plane direction of the second conductive layer (12) and contact the first conductive layer (11). The method also includes a step of performing a second etching process from the side of the first conductive layer (11) for removing part of the first conductive layer (11) contacting the pre thin wall portions (T1′-T3′) to form the thin wall portions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.