Fabricating method of image sensor
US7833817B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 10, 2008 |
| Grant date | Nov 16, 2010 |
| Priority date | — |
| Expiry date | Dec 26, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8063
Abstract
A method for fabricating an image sensor includes following steps. First, a substrate having semiconductor devices formed thereon is provided. Interlayer insulating films and Interlayer conductive films are formed on the substrate alternately, wherein the interlayer conductive films are electrically connected to the semiconductor devices. Next, isolated photo-diodes are formed on a topmost layer of the interlayer conductive films, wherein one electrode of the isolated photo-diodes is electrically connected to a topmost layer of the interlayer conductive films. A top insulating layer is formed on the topmost layer of the interlayer conductive films, wherein the isolated photo-diodes are covered by the top insulating layer. A top conductive layer is formed in the top insulating layer, wherein the top conductive layer is electrically connected to another electrode of the isolated photo-diodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.