Method and apparatus for thin film solar cell manufacturing
US7833821B2 · kind B2 · utility
9Cited by
4References
15Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 24, 2006 |
| Grant date | Nov 16, 2010 |
| Priority date | — |
| Expiry date | Feb 2, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/541
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention provides a method of making a Cu—In—Ga sputtering target by melting Cu, In and Ga, Cu and In or Cu and Ga to form a uniform melt with a pre-determined stoichiometry, which melt is sprayed to cause sprayed uniform melt particles to solidify into Cu—In—Ga particles with the pre-determined stoichiometry. The sputtering target is then made using the Cu—In—Ga particles. In a further aspect of the invention, there is provided a method of producing a thin film absorber layer for solar cell fabrication by sputter depositing a precursor film with a first composition
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.