Patent · US Active

3D interconnect with protruding contacts

US7833830B2 · kind B2 · utility

2Cited by

28References

16Claims

0Family size

Assignee

HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. · US

Inventors

Chien-Hua Chen · Corvallis, US
Zhizhang Chen · Corvallis, US
Neal Meyer · Corvallis, US

Key dates

Filing date	Jul 16, 2007
Grant date	Nov 16, 2010
Priority date	—
Expiry date	Dec 4, 2028

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/15788
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

This invention relates to a semiconductor having protruding contacts comprising, a first semiconductor substrate having at least one interconnect located substantially within the first substrate, and a second semiconductor substrate having at least one protruding contact point that substantially contacts at least one interconnect.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.