Semiconductor device and method for forming same

US7833862B2 · kind B2 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Oliver Blank · Villach, AT
• Uli Hiller · Bad Abbach, DE
• Maximilian Roesch · Villach, AT
• Walter Rieger · Arnoldstein, AT

Key dates

• Filing date: Mar 3, 2008
• Grant date: Nov 16, 2010
• Expiry date: Jun 19, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/519

Abstract

A semiconductor device and method. One embodiments provides a semiconductor substrate having a trench with a sidewall isolation comprising a first isolating material, a field electrode formed in lower portion of the trench, a cover comprising a second material above the field electrode, the second material being selectively etchable to the first isolating material, a gate dielectric on the sidewall in an upper portion of the trench and a gate electrode in the upper portion of the trench.