Manufacture of semiconductor device
US7833866B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Nov 21, 2007 |
| Grant date | Nov 16, 2010 |
| Priority date | — |
| Expiry date | Aug 7, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/26513
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A reflectance-controlling layer whose reflectance to irradiation of laser light becomes lower as a thickness thereof becomes thinner is formed on a semiconductor substrate having a first region and a second region. Thereafter, the reflectance-controlling layer on the first region is etched. Then, a laser light is irradiated to the semiconductor substrate to anneal an n−-type semiconductor region and an n+-type semiconductor region of the first region. In the same manner, after the reflectance-controlling layer is formed on the semiconductor substrate, the reflectance-controlling layer on the second region is etched. Then, a laser light is irradiated to the semiconductor substrate to anneal a p−-type semiconductor region and a p+-type semiconductor region of the second region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.