Semiconductor device and method of fabricating the same
US7833902B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 24, 2007 |
| Grant date | Nov 16, 2010 |
| Priority date | — |
| Expiry date | Feb 3, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/482
Abstract
In a semiconductor device and a method of fabricating the same, the semiconductor device includes a contact pad in a first interlayer insulating layer on a semiconductor substrate, a contact hole in a second interlayer insulating layer on the first interlayer insulating layer, selectively exposing the contact pad, a contact spacer on internal walls of the contact hole, a first contact plug connected to the contact pad exposed by the contact hole having the contact spacer on the internal walls thereof, the first contact plug partially filling the contact hole, a metal silicide layer on a surface of the first contact plug, and a second contact plug on the metal silicide layer and partially filling the remaining portion of the contact hole.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.