Organic-metal precursor material and method of manufacturing metal thin film using the same
US7834206B2 · kind B2 · utility
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Key dates
| Filing date | Sep 8, 2009 |
| Grant date | Nov 16, 2010 |
| Priority date | — |
| Expiry date | Sep 8, 2029 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC07F15/0053
- WIPO fieldOrganic fine chemistry
- WIPO sectorChemistry
Abstract
Provided are an organic-metal precursor material that can be readily decomposed without reacting with an oxidant, a method of manufacturing a metal thin film using the organic-metal precursor material, and a metal thin film prepared using the organic-metal precursor material. The organic-metal precursor material is an organic molecule having lone-pair electrons selected from the group consisting of ether, amine, tetrahydrofuran (THF), a phosphine group, and a phosphite group, and has a structure of covalent coordination bond.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.