Method of fabricating thin film transistor
US7834352B2 · kind B2 · utility
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5References
14Claims
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Key dates
| Filing date | Jan 11, 2008 |
| Grant date | Nov 16, 2010 |
| Priority date | — |
| Expiry date | Apr 17, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/211
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method of fabricating a thin film transistor, in which source and drain electrodes are formed through a solution process, even all stages which include formation of electrodes on a substrate, formation of an insulator layer, and formation of an organic semiconductor layer are conducted through the solution process. In the method, the fabrication is simplified and a fabrication cost is reduced. It is possible to apply the organic thin film transistor to integrated circuits requiring high speed switching because of high charge mobility.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.