Structure of thin film transistor
US7834357B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 11, 2007 |
| Grant date | Nov 16, 2010 |
| Priority date | — |
| Expiry date | Oct 11, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K71/621
Abstract
A structure of a thin film transistor (TFT) is provided. A substrate has a first surface and a second surface opposite to each other, in which the first surface has a patterned mask layer. A patterned first electrode layer is disposed on the second surface of the substrate and has a gate portion and a capacitor electrode portion. A patterned second electrode layer is disposed on the second surface of the substrate and has a source and a drain, in which the patterned second electrode layer is self-aligned with the patterned first electrode layer by exposing the first surface of the substrate with the patterned mask layer as a mask. An insulating layer is disposed between the patterned first electrode layer and the patterned second electrode layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.