Implanted counted dopant ions

US7834422B2 · kind B2 · utility

Assignee

• Qucor Pty Ltd · AU

Inventors

• Soren Andresen · Copenhagen, DK
• Andrew Dzurak · Sydney, AU
• Eric Gauja · Parramatta, AU
• Sean J. Hearne · Kildare, IE
• Toby Felix Hopf · Melbourne, AU
• David Jamieson · Melbourne, AU
• Mladen Mitic · Chatswood, AU
• Steven Prawer · Sydney, AU
• Changyi Yang · Melbourne, AU

Key dates

• Filing date: May 18, 2005
• Grant date: Nov 16, 2010
• Expiry date: Jul 28, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/62
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

This invention concerns semiconductor devices of the general type comprising a counted number of dopant atoms (142) implanted in regions of a substrate (158) that are substantially intrinsic semiconductor. One or more doped surface regions (152) of the substrate (158) are metallized to form electrodes (150) and a counted number of dopant ions (142) are implanted in a region of the substantially intrinsic semiconductor.