Transmission gate with body effect compensation circuit
US7834677B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 5, 2008 |
| Grant date | Nov 16, 2010 |
| Priority date | — |
| Expiry date | Jun 23, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K2217/0018
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A transmission gate circuit includes a first PMOS device, a first NMOS device, a second PMOS device, a second NMOS device, and a third transistor. A gate electrode, a first electrode and a second electrode of the first PMOS device are coupled to a first control signal, an input end, and an output end, respectively. A gate electrode, a first electrode and a second electrode of the first NMOS device are coupled to a second control signal, the input end, and the output end, respectively. A gate electrode, a first electrode and a second electrode of the second PMOS device are coupled to the first control signal, an input end, and a body electrode of the first PMOS device, respectively. A gate electrode, a first electrode, and a second electrode of the second NMOS device are coupled to the second control signal, a body electrode of the first PMOS device, and the output end, respectively. A gate electrode, a first electrode and a second electrode of the third PMOS device are coupled to a second control signal, a first supply voltage, and the body electrode of the first PMOS device, respectively.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.