Semiconductor image sensing element and fabrication method therefor, and semiconductor image sensing device and fabrication method therefor
US7834926B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 2, 2006 |
| Grant date | Nov 16, 2010 |
| Priority date | — |
| Expiry date | Aug 16, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/811
Abstract
A semiconductor image sensing element has a semiconductor element including an image sensing area, a peripheral circuit region, a plurality of electrode portions provided in the peripheral circuit region, and a plurality of micro-lenses provided on the image sensing area and an optical member having a configuration covering at least the image sensing area and bonded over the micro-lenses via a transparent bonding member. The side surface region of the optical member is formed with a light shielding film for preventing the irradiation of the image sensing area with a reflected light beam or a scattered light beam from the side surface region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.