Patent · US Active

Magnetoresistive stack with enhanced pinned layer

US7835116B2 · kind B2 · utility

6Cited by
16References
15Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 9, 2005
Grant dateNov 16, 2010
Priority date
Expiry dateSep 21, 2027

Classification

  • Technology area (CPC B)Performing Operations; Transporting
  • CPC primaryB82Y25/00
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

A magnetoresistive stack includes a free layer, a separating layer, a pinned layer, and a magnetic stabilizer in close proximity to the pinned layer such that such that the magnetic stabilizer enhances the stability of the magnetization direction of the pinned layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.