Memory elements and cross point switches and arrays of same using nonvolatile nanotube blocks
US7835170B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 8, 2007 |
| Grant date | Nov 16, 2010 |
| Priority date | — |
| Expiry date | May 24, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/943
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Under one aspect, a covered nanotube switch includes: (a) a nanotube element including an unaligned plurality of nanotubes, the nanotube element having a top surface, a bottom surface, and side surfaces; (b) first and second terminals in contact with the nanotube element, wherein the first terminal is disposed on and substantially covers the entire top surface of the nanotube element, and wherein the second terminal contacts at least a portion of the bottom surface of the nanotube element; and (c) control circuitry capable of applying electrical stimulus to the first and second terminals. The nanotube element can switch between a plurality of electronic states in response to a corresponding plurality of electrical stimuli applied by the control circuitry to the first and second terminals. For each different electronic state, the nanotube element provides an electrical pathway of different resistance between the first and second terminals.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.