Semiconductor laser
US7835413B2 · kind B2 · utility
1Cited by
8References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 26, 2008 |
| Grant date | Nov 16, 2010 |
| Priority date | — |
| Expiry date | Sep 3, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/2275
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser comprises: a ridge structure including a p-type cladding layer, an active layer, and an n-type cladding layer stacked on one another; and a burying layer burying sides of the ridge structure. The burying layer includes a p-type semiconductor layer and an n-type semiconductor layer that form a pn junction; and one of the p-type semiconductor layer and the n-type semiconductor layer has a carrier concentration of 5×1017 cm−3 or less near the pn junction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.