Single longitudinal mode laser diode
US7835415B2 · kind B2 · utility
5Cited by
9References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 31, 2004 |
| Grant date | Nov 16, 2010 |
| Priority date | — |
| Expiry date | May 27, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/34313
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A single-mode, etched facet distributed Bragg reflector laser includes an AlGaInAs/InP laser cavity, a front mirror stack with multiple Fabry-Perot elements, a rear DBR reflector, and a rear detector. The front mirror stack elements and the rear reflector elements include input and output etched facets, and the laser cavity is an etched ridge cavity, all formed from an epitaxial wafer by a two-step lithography and CAIBE process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.