Tantalum anodes for high voltage capacitors employed by implantable medical devices and fabrication thereof
US7837743B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 24, 2007 |
| Grant date | Nov 23, 2010 |
| Priority date | — |
| Expiry date | Aug 29, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01G9/07
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A high voltage capacitor anode for an implantable medical device is fabricated by sintering, anodizing and heat treating a pressed tantalum powder slug. The sintering may be performed at a temperature between approximately 1500° C. and approximately 1600° C. for a time between approximately 3 minutes and approximately 35 minutes; subsequent anodization may be performed by immersing the slug in an electrolyte at a temperature between approximately 15° C. and approximately 30° C. and then applying a voltage across the slug, the voltage being between approximately 175 Volts and approximately 375 Volts; subsequent heat treating may be performed at a temperature between approximately 400° C. and approximately 460° C. for a time between approximately 50 minutes and approximately 65 minutes. Following heat treating, the anode is reformed by a second anodization.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.