Method for manufacturing a nitride semiconductor laser element and a nitride semiconductor laser element
US7838316B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jul 16, 2008 |
| Grant date | Nov 23, 2010 |
| Priority date | — |
| Expiry date | Jul 16, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/173
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for manufacturing a nitride semiconductor laser element, which has over a substrate a laminate including an element region constituting a cavity, an island layer separated from the element region, an exposed region separating the element region from the island layer, and an auxiliary groove provided along an end face of the cavity, and with which the cavity end face is obtained by dividing the laminate and the substrate along the first auxiliary groove, the method comprises a step of: forming the laminate over the substrate; removing part of the laminate to separate the laminate into the element region and the island layer and to form the exposed region provided continuously in the cavity direction of the nitride semiconductor laser element; forming the first auxiliary groove so as to be adjacent to the island layer; and dividing so that the island layer is disposed in a corner of the nitride semiconductor laser element to obtain a nitride semiconductor laser element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.