Al-doped charge trap layer, non-volatile memory device and methods of fabricating the same
US7838422B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 28, 2007 |
| Grant date | Nov 23, 2010 |
| Priority date | — |
| Expiry date | Mar 29, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/259
Abstract
Provided is an aluminum (Al) doped charge trap layer, a non-volatile memory device and methods of fabricating the same. The charge trap layer may include a plurality of silicon nano dots that trap charges and a silicon oxide layer that covers the silicon nano dots, wherein the charge trap layer is doped with aluminum (Al). The non-volatile memory device may include a substrate including a source and a drain on separate regions of the substrate, a tunneling film on the substrate contacting the source and the drain, the charge trap layer according to example embodiments, a blocking film on the charge trap layer, and a gate electrode on the blocking film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.