Method to manufacture a thin film resistor

US7838429B2 · kind B2 · utility

Assignee

• TEXAS INSTRUMENTS INCORPORATED · US

Inventors

• Tony Phan · Flower Mound, US
• Kyle Flessner · Richardson, US
• Martin B. Mollat · McKinney, US
• Connie P. Wang · Irvine, US
• Arthur Pan · Plano, US
• Eric Beach · Tucson, US
• Michelle R. Keramidas · Garland, US
• Karen Elizabeth Burks · Richardson, US

Key dates

• Filing date: Jul 18, 2007
• Grant date: Nov 23, 2010
• Expiry date: Jul 28, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D88/01

Abstract

A method for manufacturing a semiconductor device that method comprises forming a thin film resistor by a process that includes depositing a resistive material layer on a semiconductor substrate. The process also includes depositing an insulating layer on the resistive material layer, and performing a first dry etch process on the insulating layer to form an insulative body. The process further includes performing a second dry etch process on the resistive material layer to form a resistive body. The resistive body and the insulative body have substantially identical perimeters.