Semiconductor devices having resistive memory elements
US7838863B2 · kind B2 · utility
4Cited by
5References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 19, 2009 |
| Grant date | Nov 23, 2010 |
| Priority date | — |
| Expiry date | Apr 18, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/32
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Provided is a semiconductor device including a resistive memory element. The semiconductor device includes a substrate and the resistive memory element disposed on the substrate. The resistive memory element has resistance states of a plurality of levels according to generation and dissipation of at least one platinum bridge therein.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.