Light-emitting device, electronic device, and manufacturing method of light-emitting device
US7838874B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 13, 2008 |
| Grant date | Nov 23, 2010 |
| Priority date | — |
| Expiry date | Sep 12, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K50/165
Abstract
The present invention provides a light-emitting element and a light-emitting device which have high contrast, and specifically, provides a light-emitting device whose contrast is enhanced, not by using a polarizing plate but using a conventional electrode material. Reflection of external light is suppressed by provision of a light-absorbing layer included between a non-light-transmitting electrode and a light-emitting layer. As the light-absorbing layer, a layer is used, which is obtained by adding a halogen atom into a layer including an organic compound and a metal oxide. Further, the light-absorbing layer is formed also over a region in which a thin film transistor for driving a light-emitting element is formed, a region in which a wiring is formed, and the like, and thus light is extracted from the side opposite to the region in which the TFT is formed, thereby reducing reflection of external light.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.