Thin film transistor substrate and liquid crystal display
US7838882B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 29, 2008 |
| Grant date | Nov 23, 2010 |
| Priority date | — |
| Expiry date | Oct 2, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/136227
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A TFT substrate comprises a substrate, a gate electrode and a lower electrode of a capacitor formed thereon, a first insulating layer formed thereon, a channel layer above the gate electrode and a lower layer of an upper electrode of the capacitor, a channel protection layer formed on an intermediate part of said channel layer and a capacitor protection layer formed on a connection region of the lower layer, source/drain electrodes formed on said channel layer and an upper layer of the upper electrode of the capacitor formed on the lower layer and covering the capacitor protection layer, a second insulating layer covering them, a first connection hole exposing the source electrode and a second connection hole exposing a connection region of said upper layer, which are penetrating the second insulating layer, and a pixel electrode formed thereon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.