Semiconductor sensing field effect transistor, semiconductor sensing device, semiconductor sensor chip and semiconductor sensing device
US7838912B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 11, 2005 |
| Grant date | Nov 23, 2010 |
| Priority date | — |
| Expiry date | Jan 17, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N27/414
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A semiconductor sensing field effect transistor uses an organic unimolecular film formed on a gate insulating layer. In the semiconductor sensing field effect transistor and a semiconductor sensing device, the gate insulating layer has a stack structure wherein a second silicon oxide layer is stacked on a first silicon oxide layer through a silicon nitride layer. A semiconductor sensor chip and the semiconductor sensing device are provided with a field effect transistor chip wherein the gate insulating layer, a source electrode and a drain electrode are integrated on a silicon board, a source electrode terminal wiring connected with the source electrode, and a drain electrode terminal wiring connected with the drain electrode. In the semiconductor sensor chip and the semiconductor sensing device, the transistor chip, the source electrode terminal wiring and the drain electrode terminal wiring are sealed so as to expose an edge part which is not connected with the gate insulating layer of the transistor chip and the source electrode of the source electrode terminal wiring, and an edge part which is not connected with the drain electrode of the drain electrode terminal wiring.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.