Thin-film transistor, electronic circuit, display unit, and electronic device
US7838916B2 · kind B2 · utility
0Cited by
0References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 1, 2006 |
| Grant date | Nov 23, 2010 |
| Priority date | — |
| Expiry date | Jan 10, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6739
Abstract
A thin-film transistor includes a gate electrode, a source electrode, a drain electrode, a semiconductor layer, and a gate insulating layer for insulating the source electrode and the drain electrode from the gate electrode, wherein the gate insulating layer includes composite particles in which a hydrophobic compound is provided on the surfaces of insulating inorganic particles.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.