Back illuminated sensor with low crosstalk
US7838956B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 17, 2008 |
| Grant date | Nov 23, 2010 |
| Priority date | — |
| Expiry date | Feb 13, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/807
Abstract
A back-illuminated image sensor includes a sensor layer having a frontside and a backside opposite the frontside. An insulating layer is situated adjacent the backside and a circuit layer is adjacent the frontside. A plurality of photodetectors of a first type conductivity convert light incident on the backside into photo-generated charges. The photodetectors are disposed in the sensor layer adjacent the frontside. A region of a second type conductivity is formed in at least a portion of the sensor layer adjacent the frontside and is connected to a voltage terminal for biasing the second type conductivity region at a predetermined voltage. A well of the second type conductivity is formed in the sensor layer adjacent the backside. Trench isolations in the sensor layer start at the frontside and extend beyond the depletion region of the photodiodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.