Patent · US Active

ESD protected integrated capacitor with large capacity

US7838965B2 · kind B2 · utility

7Cited by

4References

15Claims

0Family size

Assignee

NXP B.V. · NL

Inventors

Mareike Klee · Straelen, DE
Rainer Kiewitt · Roetgen, DE
Ulrich Schiebel · Aachen, DE
Hans-Wolfgang Brand · Aachen, DE
Ruediger Mauczok · Erkelenz, DE

Key dates

Filing date	Feb 27, 2006
Grant date	Nov 23, 2010
Priority date	—
Expiry date	Jan 14, 2027

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The integrated capacitor structure comprises a first branch with a first capacitor (60) and a second branch with a second capacitor (70). The second capacitor (70) has a higher capacitance density and a lower breakdown voltage than the first capacitor (60). The first branch has a shorter RC time constant than the second branch, such that a voltage peak will substantially follow the first branch. This first capacitor (60) has a sufficient capacity to store the charge of the voltage peak. In one embodiment, the second capacitor (70) is a stacked capacitor. The structure is suitable for ESD-protection and may, to this end, additionally comprise diodes (21) and resistors (22).

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.