Method of measuring deep trenches with model-based optical spectroscopy
US7839509B2 · kind B2 · utility
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31Claims
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Key dates
| Filing date | Jun 30, 2006 |
| Grant date | Nov 23, 2010 |
| Priority date | — |
| Expiry date | Mar 12, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01B11/0625
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The invention represents an improved method of measuring trenches on semiconductor wafers with optical spectroscopy. According to the described method, it is possible to characterize not only depth but also shape of the trench. The advancement is achieved by improved Effective Medium Approximation-based modeling of the optical response of trench structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.