Trench capacitor device suitable for decoupling applications in high-frequency operation
US7839622B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Nov 3, 2006 |
| Grant date | Nov 23, 2010 |
| Priority date | — |
| Expiry date | Oct 4, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/15321
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A capacitor device, an electronic circuit comprising a capacitor device, an electronic component, and a method of forming a capacitor device are described. In the capacitor device, a current-path region extends from one of two trench capacitor electrodes to a respective contact structure. The current-path region is obtainable by thinning the substrate from an original substrate thickness down to reduced substrate thickness either in a lateral substrate portion containing the capacitor region or over the complete lateral extension of the substrate before forming the first and second contact structures. The capacitor device exhibits a reduced impedance in the current-path region. This reduced impedance implies a low self-inductance and self-resistance that is caused by the current-path region. The low self-inductance provides an improved signal suppression over a broadened spectral range in a circuit configuration that employs the capacitor device as a bypass capacitor between a signal line and ground potential.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.