Patent · US Active

Local injector of spin-polarized electrons with semiconductor tip under light excitation

US7841016B2 · kind B2 · utility

0Cited by
2References
8Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMay 23, 2006
Grant dateNov 23, 2010
Priority date
Expiry dateDec 27, 2026

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG01Q80/00
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

The invention is directed to a spin-polarized electron injector using a semiconductor tip, in which tip the injected electrons are photocreated by a circularly polarized light excitation incident on the rear of the tip. This tip is supported by a transparent lever or cantilever and undergoes a surface treatment for the purpose of removing the surface oxide layer, to prevent said layer from reforming and to improve the proportion of injected electrons.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.