Local injector of spin-polarized electrons with semiconductor tip under light excitation
US7841016B2 · kind B2 · utility
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2References
8Claims
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Key dates
| Filing date | May 23, 2006 |
| Grant date | Nov 23, 2010 |
| Priority date | — |
| Expiry date | Dec 27, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01Q80/00
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The invention is directed to a spin-polarized electron injector using a semiconductor tip, in which tip the injected electrons are photocreated by a circularly polarized light excitation incident on the rear of the tip. This tip is supported by a transparent lever or cantilever and undergoes a surface treatment for the purpose of removing the surface oxide layer, to prevent said layer from reforming and to improve the proportion of injected electrons.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.