Patent · US Active

Extreme ultraviolet photolithography mask, with resonant barrier layer

US7842438B2 · kind B2 · utility

8Cited by

0References

16Claims

0Family size

Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventor

Christophe Constancias · Sarcenas, FR

Key dates

Filing date	Apr 2, 2007
Grant date	Nov 30, 2010
Priority date	—
Expiry date	Sep 7, 2027

Classification

Technology area (CPC G)Physics
CPC primaryG03F1/32
WIPO fieldOptics
WIPO sectorInstruments

Abstract

The invention relates to extreme ultraviolet photolithography masks that operate in reflection. These masks comprise a lower mirror covering a substrate, and two types of reflecting zones Z1 and Z2 in order to form a phase shift mask. An etch stop layer is interposed between the lower mirror and an upper reflective structure. This layer has a thickness such that it behaves like a reflective resonant cavity surrounded by the upper and lower reflective structures.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.